HOME Analyst Briefings Analyst Briefing Presentation on “Three-dimensional Integrated Circuit (3D IC/Chip) & Through-Silicon Via (TSV) Interconnects Market - Global Forecast & Trend Analysis (2011 - 2016)” to be held on April 25, 2012


Analyst Briefing Presentation on “Three-dimensional Integrated Circuit (3D IC/Chip) & Through-Silicon Via (TSV) Interconnects Market - Global Forecast & Trend Analysis (2011 - 2016)” to be held on April 25, 2012

The E&SC practice at MarketsandMarkets is pleased to announce its Analyst Briefing Presentation on the “Three-dimensional Integrated Circuit (3D IC/Chip) & Through-Silicon Via (TSV) Interconnects Market - Global Forecast & Trend Analysis (2011 - 2016)” to be held on April 25, 2012.

The transition from 2 dimensional (2D) packaging to 3D packaging is considered to be one of the major developments in the semiconductor industry. 3D packaging is observed to pave way for the concept of ‘More than Moore’ with comparatively lesser investment. This has led to strategic innovations with respect to 3D integration despite the economic downturn. The use of TSV interconnects within die stack instead of wirebond interconnect and board-level routing help to save the system energy consumption to a large extent. Some of the early innovations related to TSV include that from Samsung (South Korea) and Xilinx (U.S.).

The two categories of substrates used in the manufacture of 3D ICs include silicon on insulator (SOI) and bulk silicon. High cost is observed to be the key factor hindering the adoption of SOI wafer on a large scale. The different bonding techniques employed include die to die, die to wafer, wafer to wafer, direct bonding, adhesive bonding and metallic bonding. The yield achieved in wafer to wafer process is generally below 85% because of Known Good Die (KGD) issues and is thus observed to be cost prohibitive. In direct bonding, the wafers can be bonded at room temperature. This in turn helps to eliminate the problem of misalignment which arises due to thermal expansion of one wafer relative to the other at the time of bond reaction. With respect to process realization techniques, it is believed that wafer to wafer and via middle processes will become the preferred standard for volume production of 3D ICs mainly due to the reduced cost of the end product. On the other hand, via last approach can be performed with the currently available infrastructure and hence they are expected to open the path to better market adoption for 3D integration.

Amongst the various end products for 3D ICs and TSV interconnects, memories are observed to be the most potential product market with a market share of approximately 40%. This is followed by sensors and in particular, image sensors. Consumer electronics application sector is observed to hold the largest share in 3D ICs and TSV interconnect market with high demand for it in a number of end products such as smartphones, tablet PCs, e-readers, laptops and more.

The global 3D IC market is expected to grow from $2.21 billion in 2009 to $6.55 billion in 2016 at a CAGR of 16.9% from 2011 to 2016. Asian region is observed to have the highest growth rate. This is mainly attributed to the presence of a huge number of companies such as Taiwan Semiconductor Manufacturing Company Limited (Taiwan), Samsung (South Korea), United Microelectronics Corporation (Taiwan) and more who contribute to different aspects of 3D IC manufacturing and thus help to address the challenges associated with its manufacture in a cost effective manner.

The agenda for the briefing includes discussion on key high growth markets, thereby marking the growth trend in the 3D Chip Market. Furthermore, a briefing will be conducted on the competitive scenario and geographic trends and opportunities in the macro- and micro-markets with respect to North America, Europe, Asia and ROW.

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* Briefing Title: Analyst Briefing Presentation on “Three-dimensional Integrated Circuit (3D IC/Chip) & Through-Silicon Via (TSV) Interconnects Market - Global Forecast & Trend Analysis (2011 - 2016)” to be held on April 25, 2012
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