Advanced Memory Technologies Market: PCRAM (Phase-Change), RERAM (Resistive), STTRAM (Spin Transfer Torque) By Products, Applications & Technologies - Forecast & Trend Analysis (2012-2017)
The global memory market accounts for more than $57 billion which is expected to surge to $99 billion by 2015.
PCRAM technology, being non-volatile provides power saving opportunities to the end users. Although it is observed to possess features better than the conventional solutions such as SRAM, flash memory and DRAM, its reach in the mass markets is yet to gain momentum. While Micron Technology (HEADQUARTERS) and Samsung (Korea) lead the R&D activities with respect to PCRAM, there are also a number of other companies and universities such as Shanghai Institute of Microsystem and Information Technology of the Chinese Academy of Sciences, Microchip Technology Inc (HEAD), Semiconductor Manufacturing International Corp (HEAD) and more contribute effectively to its R&D.
ReRAM utilizes materials that change their resistance in response to the applied voltage. This in turn facilitates its data retention capability which is considered to be one of their key advantages. In addition, they also have the ability to read/ write data at high speeds by utilizing limited voltage. These features have largely motivated the industry participants to further study the technology and develop products for the mass market. Some of the key companies involved in R&D activities related to ReRAM include Elpida Memory Inc (Japan), Sharp (Japan), IMEC (Belgium), Samsung (Korea). Its potential density and speed are expected to open up valuable markets for this technology in the near future.
STT-RAM is an evolution in magnetic storage from hard disk drives to solid-state semiconductor memory which uses spin-polarized current to write magnetic bits. The key building block for the STTRAM is the magnetic tunnel junction (MTJ).
STT-RAM has been acknowledged by key semiconductor companies as the leading memory solution for the 45 nm technology node and beyond. STT-RAM is expected to solve the key drawbacks of first-generation, field-switched MRAM.
Spin-transfer torque can be used to flip the active elements in magnetic random-access memory. Spin-transfer torque random-access memory, or STT-RAM, has the advantages of lower power consumption and better scalability over conventional magnetoresistive random-access memory (MRAM) which uses magnetic fields to flip the active elements. Spin-transfer torque technology has the potential to make MRAM devices efficient in combining low current requirements and reduced cost; however, the amount of current needed to reorient the magnetization is at present too high for most commercial applications, and the reduction of this current density alone is the basis for current academic research in spin electronics.
TABLE OF CONTENTS
1 Introduction
1.1 Key Take-Away
1.2 Report Description
1.3 Markets Covered
1.4 Stakeholders
1.5 Research Methodology
1.6 Market Size
1.7 Key Data Points Taken from SecondarySources
1.8 Key Data Points Taken from Primary Sources
1.9 Assumptions Made for This Report
1.10 List Of Companies Covered During Primaries
2 Executive Summary
2.1 Market Overview
2.2.1 Introduction
2.2.2 Global Advanced Memory Technologies Market
2.2.3 History and its evolution
2.2.4 Market Share Analysis
2.2.5 Value Chain Analysis
2.2.6 Burning Issues
2.2.7 Winning Imperatives
2.2.8 Intellectual Property Analysis
3 Technology Market
3.1 Introduction
3.2 PCRAM Market
3.2.1 Market Dynamics
3.2.1.1 Market Drivers
3.2.1.1.1 Faster Switching Time
3.2.1.1.2 Inherent Scalability
3.2.1.2 Market Restraints
3.2.1.2.1 Thermal Disturbance and its Impact on reliability
3.2.1.2.2 Stability under high temperatures
3.2.1.2.3 Endurance failure due to electro migration
3.2.1.3 Market Opportunities
3.2.1.3.1 PCM in Caches
3.3 ReRAM Market
3.3.1 Market Dynamics
3.3.1.1 Market Drivers
3.3.1.1.1 High read/write speeds at low voltages
3.3.1.1.2 Replacement for SSD
3.3.1.2 Market Restraints
3.3.1.2.1 Variable resistance levels
3.3.1.2.2 Noise issue
3.3.1.2.3 Design complexity involved in large arrays
3.3.1.3 Market Opportunities
3.3.1.3.1 Flexible Electronics
3.3.1.3.2 Industrial Applications
3.4 STTRAM Market
3.4.1 Market Dynamics
3.4.1.1 Market Drivers
3.4.1.1.1 Cloud Computing
3.4.1.1.2 Growth in smart phones
3.4.1.2 Market Restraints
3.4.1.2.1 High price
3.4.1.2.2 Technological immaturity and manufacturing insufficiency
3.4.1.3 Market Opportunities
3.4.1.3.1 Universal memory and nanotechnology based solutions
4 Emerging Memory Technologies by Applications
4.1 Consumer Electronics
4.1.1 Mobile Devices
4.1.2 RFID
4.1.3 iPads
4.1.4 Digital Cameras
4.1.5 Portable Storage Devices/ SSD
4.1.6 USB Flash Drives
4.1.7 MP3/ PMP
4.2 ICT
4.2.1 Main Memory Systems
4.2.2 Computing Platforms
4.2.3 Servers
4.2.4 Sim Cards
4.2.5 Smart Cards
4.2.6 Sensors (Medical, Utilities, Security etc.)
4.3 Automotive
4.4 Medical
4.5 Aerospace, Military &Defense
4.6 Others
5 Geographic Analysis
5.1 North America
5.2 Europe
5.3 Asia
5.4 ROW
6 Competitive Landscape
6.1 Market Players and Market Revenue Analysis
6.2 Recent Industry Activities
6.2.1 New Product Development& Announcements
6.2.2 Mergers and Acquisitions
6.2.3 Agreements, Partnerships and Collaborations
7 Company Profiles
7.1 Samsung
7.2 Hynix Semiconductor
7.3 Elpida Memory Inc
7.4 Qimonda
7.5 Intel Corporation
7.6 STMicroelectronics
7.7 BAE Systems
7.8 Micron
7.9 Toshiba Corporation
7.10 Panasonic
7.11 IBM
7.12 Hewlett Packard
7.13 Sharp
7.14 Unity Semiconductor
7.15 NEC
7.16 Nanya
Growth opportunities and latent adjacency in Advanced Memory Tech