Silicon Carbide Market

Silicon Carbide Market by Device (MOSFET, Diode, Module, Bare Die), Wafer Size (2 Inch, 4 Inch, 6–Inch and Above), Application (RF Device and Cellular Base Station, Power Supply and Inverter), Vertical, and Geography - Global Forecast to 2022

Report Code: SE 2556 May, 2017, by marketsandmarkets.com

The silicon carbide (SiC) market is expected to be valued at USD 617.4 million by 2022, at a CAGR of 17.4% between 2017 and 2022. The factors such as increasing demand for motor drives, ability to reduce overall system size, and increasing application of SiC in radio frequency (RF) devices and cellular base station are driving the growth of this market<

Years considered for this report

  • 2016: Base Year
  • 2017: Estimated Year
  • 2022: Forecast Year
  • 2017–2022: Forecast Period

Market Overview (DROC)

Drivers:

Ability of SiC in semiconductor to perform at high temperature and high voltage & power, Increasing demand for motor drives is lining silicon carbide based devices in positive growth trajectory, SiC-based devices facilitates system size reduction, and application of SiC devices in RF and cellular base station.

Restraints:

  • GaN is competing with SiC

Opportunity:

  • Success of electro mobility, and increasing utilization of power semiconductor technology in renewable energy generation

Challenge:

  • SiC power devices packaging is a major challenge

Market Developments in 2017:

Infineon Technologies AG leverages their experience and capabilities in 4G to support the 5G cellular infrastructure. The company offers highly efficient and integrated architecture with its RF power technologies, such as GaN-on-SiC & GaN-on-Si and other key building blocks that 5G systems demand.

Wolfspeed expanded its C3M platform with the introduction of 1200V, 75mΩ MOSFET. This product was launched in a low-impedance discrete packaging and is beneficial for high-power applications connected to a battery because of its efficient power-management capabilities.

GE and Danfoss Silicon Power GmbH signed a collaboration agreement that will allow GE to provide SiC-based power module for inverters, electric vehicles, and other related applications. The demand for power module in the US was mainly driven by the imports from Japan and Germany. However, this collaboration will allow GE to become a premium provider of SiC-based power modules in the US. The manufacturing base will be in New York, and the production will start by 2018.

GE Aviation received a contract of USD 4.1 million from the US army to develop SiC-based power electronics for high-voltage ground vehicle electric power architecture.

Littelfuse, Inc., the parent company of Monolith Semiconductor Inc., increased the investment in Monolith to increase the production of the SiC-based components. This investment, valued at USD 15 million, will allow Monolith semiconductor to cater to the growing needs from the power electronics market.
Renesas Electronics Corporation acquired Intersil, a provider of power management and precision analog solutions. This acquisition will enable considerable synergies and cross-selling opportunities and help create a superior value for end users.

The objectives of the report are:

  • To define, describe, and forecast the overall silicon carbide market on the basis of device, wafer size, application, vertical, and geography
  • To strategically analyze the micromarkets with respect to individual growth trends, prospects, and contribution to the silicon carbide market
  • To provide detailed information regarding the major factors influencing the growth of the market (drivers, restraints, opportunities, and challenges)
  • To conduct a detailed value chain analysis of the silicon carbide market
  • To analyze the opportunities in the silicon carbide market for stakeholders and provide the details of the competitive landscape for the market leaders
  • To strategically profile the key players and comprehensively analyze their market share and core competencies
  • To analyze competitive developments such as expansion, mergers and acquisitions, and product launches, along with research and development (R&D) in the silicon carbide market

The research methodology used to estimate and forecast the silicon carbide market begins with capturing data on key vendor revenue through secondary sources such as Semiconductor Industry Association, Global Semiconductor Alliance, and IEEE Power Electronics Society, among others. The vendor offerings are also taken into consideration to determine the market segmentation. A combination of top-down and bottom-up procedures has been employed to arrive at the overall size of the silicon carbide market from the revenues of key players in the market. After arriving at the overall market size, the total market has been split into several segments and subsegments that have been verified through the primary research by conducting extensive interviews with people holding key positions such as CEOs, VPs, directors, and executives. The market breakdown and data triangulation procedures have been employed to complete the overall market engineering process and arrive at the exact statistics for all segments and subsegments. The breakdown of the profiles of primaries is depicted in the figure below:

Silicon carbide market

To know about the assumptions considered for the study, download the pdf brochure

This report provides valuable insights regarding the ecosystem of this market such as raw material suppliers, silicon carbide devices manufacturers, distributors, and consumers. The ecosystem of the silicon carbide market consists SiC device manufacturers such as Infineon Technologies AG; CREE Inc. (Wolfspeed); ROHM Semiconductor; STMicroelectronics N.V.; ON Semiconductor; Toshiba Corporation; General Electric; Saint-Gobain Silicon Carbide; Fuji Electric Co., Ltd.; Renesas Electronics Corporation; Dow Corning Corporation; GeneSiC Semiconductor Inc.; Global Power Technologies Group; TanKeBlue Semiconductor Co. Ltd.; Microsemi Corporation; Central Semiconductor Corporation; Sanken Electric Co., Ltd.; Bruckewell Technology Corporation; PileGrowth Tech s.r.l; Ascatron AB; Monolith Semiconductor Inc.; Graphensic AB; BASiC 3C, Inc.; Norstel AB; United Silicon Carbide, Inc.

Key Target Audience:

  • Electronic design automation (EDA) and design tool vendors
  • Original equipment manufacturers (OEMs)
  • Integrated device manufacturers (IDMs)
  • Original design manufacturers (ODMs)
  • Automotive ODM and OEM technology solution providers
  • Assembly, testing, and packaging vendors
  • Technology, service, and solution providers
  • Intellectual property (IP) core and licensing providers
  • Suppliers and distributors
  • Governments and other regulatory bodies
  • Technology investors
  • Research institutes and organizations
  • Market research and consulting firms

The study answers several questions for the stakeholders, primarily, which market segments to focus on in the next two to five years (depends on the range of forecast period) for prioritizing the efforts and investments.

Report Scope:

In this report, the silicon carbide market has been segmented into the following categories in addition to the industry trends, which have been detailed below:

Market, By Device

  • SIC discrete devices
  • SiC MOSFET
  • SiC diode
  • SIC module
  • SiC bare die

Market, By Wafer Size

  • 2 Inch
  • 4 Inch
  • 6-Inch and above

Market, By Application

  • & RF Device and Cellular Base Station
  • Power Grid Device
  • Flexible AC Transmission Systems (FACTS)
  • High-Voltage, Direct Current (HVDC)
  • Power Supply and Inverter
  • Lighting Control
  • Industrial Motor Drive
  • Flame Detector
  • EV Motor Drive
  • EV Charging
  • Electronic Combat System
  • Wind Energy
  • Solar Energy
  • Others

Market, By Vertical

  • Telecommunications
  • Energy & Power
  • Automotive
  • Renewable Power Generation
  • Defense
  • Power Electronics
  • Others

Market, By Geographical Analysis

  • North America
    • US
    • ; Canada
    • Mexico
    • Europe
    • UK
    • Germany
    • Italy
    • Rest of Europe
  • Asia Pacific
    • China
    • Japan
    • South Korea
    • Rest of APAC
  • Rest of the World
    • Middle East and Africa
    • South America

Competitive Landscape

Company Profiles

Detailed analysis of the major companies present in the silicon carbide market.

Available Customizations:

With the given market data, MarketsandMarkets offers customizations according to the company’s specific needs. The following customization options are available for the report:

Product Analysis

  • Product matrix gives a detailed comparison of product portfolio of each company.

Company Information

  • Detailed analysis and profiling of additional market players (up to five).

The silicon carbide (SiC) market size is expected to be valued at USD 617.4 million by 2022, at a CAGR of 17.4% between 2017 and 2022. The factors such as the ability of SiC devices in semiconductor to perform at high temperature and high voltage and power, increasing demand for motor drives, ability to reduce the overall system size, and increasing applications of SiC in radio frequency (RF) devices and cellular base station are expected to drive the growth of silicon carbide market.

Among all the major verticals of the silicon carbide, the power electronics vertical held the largest share of the market in 2016. The main driver for the growth of this market is owing to increasing use of SiC devices in power supply and inverter applications. The silicon carbide discrete device is expected to hold the largest share of the market during the forecast period. This is due to the high demand for SiC discrete devices that can be attributed to the fact that these devices have numerous applications including RF and cellular base station applications as well as in power supply and inverter applications.

The market for SiC diode is expected to hold the largest share, and they are also expected to grow at the moderate CAGR during the forecast period. The growth is attributed to the wide usage of SiC diode in RF and cellular base station applications. On the other hand, SiC module is expected to grow at the highest CAGR owing to increasing application of SiC MOSFETs and SiC diodes in various applications.

The SiC wafer size of 6-inch and above is expected to reach at the highest CAGR between 2017 and 2022. The demand for 6-inch and above SiC wafer is rising as these can facilitate the manufacturing of more number of devices as compared to 2 and 4 inches silicon carbide wafers.

In terms of the different geographic regions, APAC held the largest market share in 2016 and expected to grow at the second-highest CAGR in the forecast period. Growth in the APAC silicon carbide market can be attributed to the enhanced use in RF and cellular base station devices, due to the expanding 4G network, and power supply and inverter application. The Americas accounted for the second-largest share in 2016. The growth is attributed to the presence of some of the major silicon carbide device manufacturing companies. The RoW is expected to grow at highest CAGR. Exponential growth in the RoW can also be attributed to the increased use of RF and cellular base station devices due to expanding cellular network.

Silicon carbide market

EV motor drive application is expected to grow at the highest CAGR owing to increasing silicon carbide devices penetration in electric vehicles, as silicon carbide devices reduce the size and weight of the system and overall weight of the vehicle.

Major Applications:

Cellular base station is a communication station positioned at fixed geographical locations. These base stations are used to communicate wirelessly. Base stations are majorly installed for the wireless telephone system. Cellular base stations required reliable semiconductor devices that can facilitate higher frequency operations. For these applications, previously silicon devices were used, but the ability of silicon carbide to perform at higher frequency played a dominant role, and the silicon carbide adoption is increasing day by day. Silicon carbide semiconductor is used in signal amplifiers and switching systems. The silicon carbide also facilitates fast switching in amplifiers.

Smart grid is defined as a grid that will be able to manage itself and communicate with any electrical device over protocol to foresee the potential problems in the grid network and take independent and speedy decisions with regard to the shortfalls in the network, if any. A smart grid is not just about installing smart meters across residential and commercial areas but also about the ability to control the entire energy network. Setting up a communication network is equally essential for the smart grid network, but this is only one of the major aspects of the smart grid arena.

To sustain in the competitive power industry, companies active in this field need advanced measures such as flexible AC transmission systems (FACTS) to cater to the ever-growing need for higher flexibility and reliability in existing power systems. FACTS are defined as a technology that is a combination of power electronics and other static components to increase controllability and power transfer ability of an existing network. FACTS is becoming popular among power industry players because it allows network providers to increase the power transfer capability of the existing transmission lines without building a new infrastructure, which is in alignment with the environment also.

High-voltage, direct current (HVDC) systems use direct current for bulk transmission of electrical power. HVDC systems require their electronic components to operate under a high voltage. This is possible with devices that are developed based on silicon carbide materials. The use of silicon carbide reduces power loss and helps in operating the systems efficiently.

In the IT power supply industry, silicon carbide devices are acting as game changers. Silicon carbide devices allow users to operate in the double-conversion mode and maintain higher efficiencies. Using silicon carbide devices in UPS can facilitate in size reduction, increase power quality, and reduce cost. Silicon carbide devices are providing distinct advantages compared to its silicon and hybrid counterparts. The traditional silicon insulated-gate bipolar transistor (IGBT) has no advantage against power loss, but the silicon carbide hybrid module can reduce power loss up to 45%, and full silicon carbide-based devices in UPS can reduce power loss up to 100%.

In the lighting industry, silicon carbide majorly addresses LEDs. LEDs are created with the help of Indium gallium nitride (InGaN) and the sapphire substrate; however, this combination does not work longer and provoked LED manufacturer to find some other reliable materials. Hence, silicon carbide came into existence. The inclusion of silicon carbide in LED technology promises to 2-fold the luminosity.

Industrial motor drives are expected to operate at full pace to produce maximum output in minimum time. The industrial drives facilitate heavy operations and therefore perform under high power, temperature, frequencies, and sometimes under radiation. Silicon carbide devices are therefore used in industrial motor drives.

Flame detectors are devices that identify flame radiations and activate alarms and fire suppression systems, prior to any damages. The use of flame detectors varies from application to application, depending upon factors such as the number of occupants in a building, environmental conditions, and the intensity of flames.

The silicon-based free-wheeling diode was typically used for switching in the motor drives. However, with the recent advancement in the technology and with silicon carbide-based semiconductor devices, this industry is now focusing on replacing silicon-based devices with silicon carbide-based semiconductor devices. When compared with silicon and gallium arsenide material, silicon carbide-based semiconductor provides better bandgap, breakdown field, and thermal conductivity. It has been estimated that the implementation of silicon carbide in motor drives will increase the operating frequency by 30%. The implementation of silicon carbide will help in further loss reduction during switching leading to high-density power modules. Schottky diodes are capable of operating high-speed switching, which previously was not possible with silicon-based devices.

In electric vehicle charging, high direct current (DC) is key to faster charging. High DC charges imply the need for faster and efficient AC–DC and DC–DC converters. In EV charging, silicon devices are majorly used but due to certain drawbacks such as limited voltage and power handling, silicon is going to be replaced soon. These shortcomings of silicon have given rise to wide-bandgap materials such as silicon carbide and gallium nitride. Wide-bandgap materials have properties such as high power density, high breakdown voltage, better thermal conductivity, and smaller leakage current. Additionally, wide-bandgap material results in the low heat sink that will reduce the need for external cooling and will facilitate smaller systems.

Silicon carbide has many applications in combat vehicles, especially for electronics systems operating in high temperatures. As a combat vehicle is developed to operate in military warfare, it should be capable of operating in high temperatures. It has been estimated that the use of silicon carbide will reduce the volume of the device approximately by 30%. These factors are expected to boost the demand for silicon carbide-based semiconductors in combat vehicles.
The application of silicon carbide in wind turbine and power systems is especially done in power supply modules, power inverters and drives installed in a wind turbine. The implementation of silicon carbide has helped in ensuring that the systems operate in high-voltage and high-temperature environment. It also helps reduce the power loss and the overall size.

The silicon carbide-based semiconductor has a huge application in photovoltaic inverters, because silicon carbide has the capability to withstand high frequency, reduces the loss of power, and has a high switching speed. Mitsubishi Electric (Japan) in 2011 has conducted an experiment in a photovoltaic inverter, in which they have achieved 98.0% power conversion efficiency using silicon carbide power module.

The others category for silicon carbide applications includes astronomical, pyrometer, nuclear, and atomic sciences applications.

The major players in the market include Infineon Technologies AG (Germany), CREE Inc. (Wolfspeed) (US), ROHM Semiconductor (Japan), STMicroelectronics N.V. (Switzerland), ON Semiconductor (US), United Silicon Carbide, Inc. (US), General Electric (US), GeneSiC Semiconductor Inc. (US), Fuji Electric Co., Ltd. (Japan), and Renesas Electronics Corporation (Japan). Most of the leading companies have followed the organic strategy of product launches to boost the revenue of the company.

To speak to our analyst for a discussion on the above findings, click Speak to Analyst

Table of Contents

1 Introduction (Page No. - 15)
    1.1 Objectives of the Study
    1.2 Market Definition
    1.3 Scope of the Study
           1.3.1 Markets Covered
           1.3.2 Years Considered for the Study
    1.4 Currency
    1.5 Limitations
    1.6 Stakeholders

2 Research Methodology (Page No. - 18)
    2.1 Research Data
           2.1.1 Secondary Data
                    2.1.1.1 Secondary Sources
           2.1.2 Primary Data
                    2.1.2.1 Primary Sources
                    2.1.2.2 Breakdown of Primaries
                    2.1.2.3 Key Industry Insights
           2.1.3 Secondary and Primary Research
    2.2 Market Size Estimation
           2.2.1 Bottom-Up Approach
           2.2.2 Top-Down Approach
                    2.2.2.1 Approach for Capturing the Market Share By Top-Down Analysis (Supply Side)
    2.3 Market Breakdown and Data Triangulation
    2.4 Research Assumptions

3 Executive Summary (Page No. - 28)

4 Premium Insights (Page No. - 33)
    4.1 Growth Opportunities in the Silicon Carbide Market
    4.2 Silicon Carbide Market, By Application
    4.3 Silicon Carbide Market By Geography
    4.4 Growth Rate of Regions in Silicon Carbide, 2017-2022
    4.5 Silicon Carbide Market, By Device

5 Market Overview (Page No. - 37)
    5.1 Introduction
    5.2 Market Dynamics
           5.2.1 Drivers
                    5.2.1.1 Ability of SIC in Semiconductor to Perform at High Temperature and High Voltage & Power
                               5.2.1.1.1 High Temperature
                               5.2.1.1.2 High Voltage and Power
                    5.2.1.2 Increasing Demand for Motor Drives is Lining SIC-Based Devices in Positive Growth Trajectory
                    5.2.1.3 SIC-Based Devices Facilitates System Size Reduction
                    5.2.1.4 Application of SIC Devices in RF and Cellular Base Station
           5.2.2 Restraints
                    5.2.2.1 Gan is Competing With SIC
           5.2.3 Opportunities
                    5.2.3.1 Success of Electromobility
                    5.2.3.2 Increasing Utilization of Power Semiconductor Technology in Renewable Energy Generation
           5.2.4 Challenges
                    5.2.4.1 SIC Power Devices Packaging is A Major Challenge
    5.3 Silicon Carbide Value Chain

6 Silicon Carbide Market, By Device (Page No. - 42)
    6.1 Introduction
    6.2 SIC Discrete Devices
           6.2.1 SIC Mosfet
           6.2.2 SIC Diode
           6.2.3 SIC Module
    6.3 SIC Bare Die

7 Silicon Carbide Wafer Market, By Wafer Size (Page No. - 50)
    7.1 Introduction
    7.2 2 Inch
    7.3 4 Inch
    7.4 6-Inch and Above

8 Silicon Carbide Market, By Application (Page No. - 55)
    8.1 Introduction
    8.2 RF Device & Cellular Base Station
    8.3 Power Grid Device
    8.4 Flexible Ac Transmission Systems (Facts)
    8.5 High-Voltage, Direct Current (HVCD)
    8.6 Power Supply and Inverter
    8.7 Lighting Control
    8.8 Industrial Motor Drive
    8.9 Flame Detector
    8.10 EV Motor Drive
    8.11 EV Charging
    8.12 Electronic Combat System
    8.13 Wind Energy
    8.14 Solar Energy
    8.15 Others

9 Silicon Carbide Market, By Vertical (Page No. - 74)
    9.1 Introduction
    9.2 Telecommunication
    9.3 Energy & Power
    9.4 Automotive
    9.5 Renewable Power Generation
    9.6 Defense
    9.7 Power Electronics
    9.8 Others

10 Geographical Analysis (Page No. - 78)
     10.1 Introduction
     10.2 North America
             10.2.1 US
             10.2.2 Canada
             10.2.3 Mexico
     10.3 Europe
             10.3.1 UK
             10.3.2 Germany
             10.3.3 Italy
             10.3.4 Rest of Europe
     10.4 Asia Pacific
             10.4.1 China
             10.4.2 Japan
             10.4.3 South Korea
             10.4.4 Rest of APAC
     10.5 Rest of the World
             10.5.1 Middle East & Africa
             10.5.2 South America

11 Competitive Landscape (Page No. - 96)
     11.1 Introduction
     11.2 Market Rank Analysis: SIC Market
     11.3 Competitive Situation and Trends
             11.3.1 New Product Launches and Developments
             11.3.2 Partnerships, Collaborations, and Joint Ventures
             11.3.3 Mergers & Acquisitions/Investments
     11.4 Vendor Dive Overview
             11.4.1 Vanguards
             11.4.2 Dynamic Players
             11.4.3 Innovators
             11.4.4 Emerging Players
     11.5 Product Offerings (For All 25 Players)
     11.6 Business Strategy (For All 25 Players)

*Top 25 Companies Analyzed for This Study are – Infineon Technologies Ag; Cree Inc. (Wolfspeed); Rohm Semiconductor; Stmicroelectronics N.V.; on Semiconductor; Toshiba Corporation; General Electric; Saint-Gobain Silicon Carbide; Fuji Electric Co., Ltd.;Renesas Electronics Corporation; DOW Corning Corporation; Genesic Semiconductor Inc.; Global Power Technologies Group; Tankeblue Semiconductor Co. Ltd.; Microsemi Corporation; Central Semiconductor Corporation; Sanken Electric Co.,Ltd.; Bruckewell Technology Corporation; Pilegrowth Tech S.R.L; Ascatron AB; Monolith Semiconductor Inc.; Graphensic AB; Basic 3C, Inc.; Norstel AB; United Silicon Carbide, Inc.

12 Company Profiles (Page No. - 107)
(Business Overview, Products Offered & Services Strategies, Key Insights, Recent Developments, MnM View)*
     12.1 Introduction
     12.2 Infineon Technologies AG
     12.3 Cree Inc. (Wolfspeed)
     12.4 Rohm Semiconductor
     12.5 Stmicroelectronics N.V.
     12.6 Fuji Electric Co., Ltd.
     12.7 On Semiconductor
     12.8 General Electric
     12.9 United Silicon Carbide, Inc.
     12.10 Genesic Semiconductor Inc.
     12.11 Renesas Electronics Corporation
     12.12 Monolith Semiconductor Inc.
     12.13 Ascatron AB
     12.14 Pilegrowth Tech S.R.L.
     12.15 Graphensic AB
     12.16 Basic 3C, Inc.

*Details on Business Overview, Products Offered & Services Strategies, Key Insights, Recent Developments, MnM View Might Not Be Captured in Case of Unlisted Companies.

13 Appendix (Page No. - 147)
     13.1 Insights of Industry Experts
     13.2 Discussion Guide
     13.3 Knowledge Store: Marketsandmarkets’ Subscription Portal
     13.4 Introducing RT: Real-Time Market Intelligence
     13.5 Available Customizations
     13.6 Related Reports
     13.7 Author Details


List of Tables (67 Tables)

Table 1 Silicon Carbide Market, 2014–2022 (USD Million)
Table 2 Silicon Carbide Market, By Device, 2014–2022 (USD Million)
Table 3 Silicon Carbide Market, By Device, 2014–2022 (Million Units)
Table 4 Silicon Carbide Market for SIC Discrete Device, By Type, 2014–2022 (USD Million)
Table 5 Silicon Carbide Market for SIC Discrete Device, By Type, 2014–2022 (Thousand Units)
Table 6 Silicon Carbide Market for SIC Mosfet, By Region, 2014–2022 (USD Million)
Table 7 Silicon Carbide Market for SIC Mosfet, By Application, 2014–2022 (USD Million)
Table 8 Silicon Carbide Market for SIC Diode, By Region, 2014–2022 (USD Million)
Table 9 Silicon Carbide Market for SIC Diode, By Application, 2014–2022(USD Million)
Table 10 Silicon Carbide Market for SIC Module, By Region, 2014–2022 (USD Thousand)
Table 11 Silicon Carbide Market for SIC Module, By Application, 2014–2022 (USD Thousand)
Table 12 Silicon Carbide Market for SIC Bare Die, By Type, 2014–2022 (USD Million)
Table 13 Silicon Carbide Market for SIC Bare Die, By Type, 2014–2022 (Thousand Units)
Table 14 Silicon Carbide Wafer Market, By Wafer Size, 2014–2022 (USD Million)
Table 15 Silicon Carbide Wafer Market, By Wafer Size, 2014–2022 (Thousand Units)
Table 16 Silicon Carbide Wafer Market, By Wafer Size, 2014–2022 (Thousand Square Inch)
Table 17 Silicon Carbide Wafer Market, By SIC Devices (SIC Diode and SIC Mosfet), 2014–2022 (USD Million)
Table 18 Silicon Carbide Wafer Market, By SIC Devices (SIC Diode and SIC Mosfet), 2014–2022 (Thousand Units)
Table 19 Silicon Carbide Wafer Market, By SIC Devices (SIC Diode and SIC Mosfet), 2014–2022 (Thousand Square Inch)
Table 20 Silicon Carbide Market, By Application, 2014–2022 (USD Million)
Table 21 Silicon Carbide Market, By Application, 2014–2022 (Million Units)
Table 22 Silicon Carbide Market for RF and Cellular Base Station Device, By Geography, 2014–2022 (USD Million)
Table 23 Silicon Carbide Market for SIC Discrete Device, By RF Device & Cellular Base Station Device Application, 2014–2022 (USD Thousand)
Table 24 Silicon Carbide Market for Power Grid Application, By Geography, 2014–2022 (USD Million)
Table 25 Silicon Carbide Market for SIC Discrete Device, By Power Grid Application, 2014–2022 (USD Million)
Table 26 Silicon Carbide Market for Flexible Transmission Systems (Facts) Application, By Geography, 2014–2022 (USD Million)
Table 27 Silicon Carbide Market for SIC Discrete Device, By Flexible Ac Transmission Systems Application, 2014–2022 (USD Million)
Table 28 Silicon Market for High-Voltage, Direct Current (HVCD), By Geography, 2014–2022 (USD Million)
Table 29 Silicon Carbide Market for SIC Discrete Device, By High-Voltage, Direct Current Application, 2014–2022 (USD Million)
Table 30 Silicon Carbide Market for Power Supply & Inverter, By Geography, 2014–2022 (USD Million)
Table 31 Silicon Carbide Market for SIC Discrete Device, By Power Supply & Inverter Application, 2014–2022 (USD Million)
Table 32 Silicon Carbide Market for Lighting Control, By Geography, 2014–2022 (USD Million)
Table 33 Silicon Carbide Market for SIC Discrete Device, By Lighting Control Application, 2014–2022 (USD Million)
Table 34 Silicon Carbide Market for Motor Drive, By Geography, 2014–2022 (USD Million)
Table 35 Silicon Carbide Market for SIC Discrete Device, By Industrial Motor Drives Application, 2014–2022 (USD Million)
Table 36 Silicon Carbide Market for Flame Detector, By Geography, 2014–2022 (USD Million)
Table 37 Silicon Carbide Market for EV Motor Drive, By Geography, 2014–2022 (USD Million)
Table 38 Silicon Carbide Market for SIC Discrete Device, By Ev Motor Drive Application, 2014–2022 (USD Million)
Table 39 Silicon Carbide Market for EV Charging, By Geography, 2014–2022 (USD Million)
Table 40 Silicon Carbide Market for SIC Discrete Device, By EV Charging Application, 2014–2022 (USD Thousand)
Table 41 Silicon Carbide Market for Electronic Combat Application, By Geography, 2014–2022 (USD Million)
Table 42 Silicon Carbide Market for Wind Energy Application, By Geography, 2014–2022 (USD Million)
Table 43 Silicon Carbide Market for SIC Discrete Device, By Wind Energy Application, 2014–2022 (USD Thousand)
Table 44 Silicon Carbide Market for Solar Energy, By Geography, 2014–2022 (USD Million)
Table 45 Silicon Carbide Market for SIC Discrete Device, By Solar Energy Application, 2014–2022 (USD Million)
Table 46 Silicon Carbide Market for Others Application, By Geography, 2014–2022 (USD Million)
Table 47 Silicon Carbide Market for SIC Discrete Device, By Other Application, 2014–2022 (USD Thousand)
Table 48 Silicon Carbide Market, By Vertical, 2017–2022 (USD Million)
Table 49 Silicon Carbide Market, By Vertical, 2017–2022 (Million Units)
Table 50 Silicon Carbide Market, By Geography, 2014–2022 (USD Million)
Table 51 Silicon Carbide Market, By Geography, 2014–2022 (Million Units)
Table 52 Silicon Carbide Market in North America, By Application, 2014–2022 (USD Million)
Table 53 Silicon Carbide Market in North America, By Discrete Device, 2014–2022 (USD Million)
Table 54 Silicon Carbide Market in North America, By Country, 2014–2022 (USD Million)
Table 55 Silicon Carbide Market in Europe, By Application, 2014–2022 (USD Million)
Table 56 Silicon Carbide Market in Europe, By Discrete Device, 2014–2022 (USD Million)
Table 57 Silicon Carbide Market in Europe, By Country, 2014–2022 (USD Million)
Table 58 Silicon Carbide Market in APAC, By Application, 2014–2022 (USD Million)
Table 59 Silicon Carbide Market in APAC, By Discrete Device, 2014–2022 (USD Million)
Table 60 Silicon Carbide Market in APAC, By Country, 2014–2022 (USD Million)
Table 61 Silicon Carbide Market in Rest of the World (RoW), By Application, 2014–2022 (USD Million)
Table 62 Silicon Carbide Market in RoW, By Discrete Device, 2014–2022 (USD Million)
Table 63 Silicon Carbide Market in RoW, By Country, 2014–2022 (USD Million)
Table 64 Ranking of the Key Players in the SIC Market for Semiconductor Materials, 2016
Table 65 New Product Launches and Developments, 2015–2017
Table 66 Partnerships, Collaborations & Joint Ventures, 2014–2017
Table 67 Mergers & Acquisitions, 2013–2017


List of Figures (46 Figures)

Figure 1 Market Segmentation
Figure 2 Silicon Carbide Market Report: Research Design
Figure 3 Bottom-Up Approach to Arrive at the Market Size
Figure 4 Top-Down Approach to Arrive at the Market Size
Figure 5 Data Triangulation
Figure 6 Assumptions of the Research Study
Figure 7 SIC Diode Held the Largest Market Size in 2016
Figure 8 APAC Expected to Dominate the Silicon Carbide Market During the Forecast Period
Figure 9 RF and Cellular Base Station Device Expected to Hold the Largest Market Size for Silicon Carbide By 2022
Figure 10 Market for EV Motor Drive is Expected to Grow at the Highest Rate Between 2017 and 2022
Figure 11 APAC Held the Largest Market Size for Silicon Carbide in 2016
Figure 12 The Ability of SIC in Semiconductor to Perform at High Temperature and High Power & Voltage is Driving the Silicon Carbide Market During the Forecast Period
Figure 13 RF & Cellular Base Station Application is Expected to Hold the Largest Market for Silicon Carbide During the Forecast Period
Figure 14 APAC Held the Largest Market Size for Silicon Carbide in 2016
Figure 15 RoW is Expected to Grow at the Highest CAGR During the Forecast Period
Figure 16 Silicon Carbide Discrete Device is Expected to Hold Largest Market Size Between 2016 and 2022
Figure 17 Market Overview
Figure 18 Value Chain Analysis
Figure 19 Silicon Carbide Diode Expected to Continue to Dominate the Market Throughout the Forecast Period
Figure 20 Market for 6-Inch and Above Silicon Carbide Wafer is Expected to Grow at the Highest Rate During the Forecast Period
Figure 21 SIC Diode Expected to Hold the Highest Market Size By 2022
Figure 22 RoW Market Expected to Show Good Growth During Forecast Period
Figure 23 SIC Diode to Hold the Largest Size of the Silicon Carbide Market
Figure 24 Silicon Carbide Market for EV Charging Application in RoW to Grow at the Highest Rate During the Forecast Period
Figure 25 Market for SIC Module in Other Application is Expected to Grow at the Highest Rate
Figure 26 Silicon Carbide Market, in Terms of Value, for Automotive Vertical is Expected to Grow at the Highest Rate During the Forecast Period
Figure 27 Silicon Carbide Market: Geographic Snapshot, 2017–2022
Figure 28 EV Motor Drive to Exhibit the Highest Growth in the North America Market During the Forecast Period
Figure 29 Snapshot of the Silicon Carbide Market in North America
Figure 30 RF and Cellular Base Station Device to Remain as the Largest Market During the Forecast Period
Figure 31 EV Motor Drive to Exhibit the Highest Growth in the APAC Market During the Forecast Period
Figure 32 Snapshot of the Silicon Carbide Market in APAC
Figure 33 RF and Cellular Base Station Device is Expected to Hold the Largest Market Size in Rest of the World During the Forecast Period
Figure 34 Companies Adopted New Product Development as the Key Growth Strategy Between 2014 and 2017
Figure 35 Battle for Market Share: New Product Launch Was the Key Strategy Between 2014 and 2017
Figure 36 Dive Chart
Figure 37 Geographic Revenue Mix for Major Market Players
Figure 38 Infineon Technologies AG: Company Snapshot (2016)
Figure 39 Cree Inc.: Company Snapshot
Figure 40 Scorecard: Product Offerings
Figure 41 Rohm Semiconductor: Company Snapshot
Figure 42 Stmicroelectronics N.V.: Company Snapshot
Figure 43 Fuji Electric Co., Ltd.: Company Snapshot
Figure 44 on Semiconductor: Company Snapshots
Figure 45 General Electric: Company Snapshot
Figure 46 Renesas Electronics Corporation: Company Snapshot


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Report Code
SE 2556
Published ON
May, 2017
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