Top 5 Silicon Carbide Companies

The silicon carbide (SiC) market is projected to reach USD 12.03 billion by 2030 from USD 3.83 billion in 2025, at a CAGR of 25.7% during the forecast period.

The major growth factors for the silicon carbide (SiC) market include the expanding deployment of SiC devices in electric vehicles and the rising demand for high-efficiency power electronics across automotive, industrial, and energy sectors. Increasing adoption of SiC in next-generation power modules is enhancing energy efficiency and enabling more compact, reliable systems. Opportunities are emerging from the integration of SiC devices in the telecommunications industry, as well as ongoing improvements in substrate quality and epitaxy processes, which enhance device performance. However, the high cost of SiC devices and the strong efficacy of alternative power semiconductor technologies remain key restraints. Challenges such as material defects, packaging and design complexities, and supply chain constraints continue to impact production and scalability. As the automotive, industrial, and telecom sectors increasingly embrace SiC-based solutions, their demand is expected to increase steadily throughout the forecast period.

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Major Silicon Carbide (SiC) Companies Include:

• STMicroelectronics (Switzerland)
• Semiconductor Components Industries, LLC (US)
• Infineon Technologies AG (Germany)
• Wolfspeed, Inc. (US)
• and ROHM Co., Ltd. (Japan)
• Fuji Electric Co., Ltd. (Japan)
• Toshiba Electronic Devices & Storage Corporation (Japan)
• Microchip Technology Inc. (US)
• Mitsubishi Electric Corporation (Japan)
• Robert Bosch GmbH (Germany)

STMicroelectronics employs a combination of organic and inorganic growth strategies to enhance its position in the global silicon carbide (SiC) market. On the organic growth side, in September 2024, the company launched its fourth-generation STPOWER SiC MOSFETs in 750 V and 1,200 V versions. These devices are specifically designed for traction inverters in electric vehicles utilizing 400 V and 800 V systems, featuring smaller die sizes, reduced resistance, and faster switching to minimize power losses and enhance overall efficiency, thereby supporting more compact and reliable powertrain designs. On the inorganic front, in December 2024, STMicroelectronics entered into a collaboration with Ampere to design a new Rowerbox solution for electric drivetrains. The project integrates ST’s SiC MOSFET technology into 400 V and 800 V EV platforms, enabling compact architectures with faster charging and improved energy efficiency. By combining product innovation with strategic collaborations, STMicroelectronics can enhance its SiC technology portfolio, expand adoption across electric mobility platforms, and offer integrated solutions for high-growth automotive and energy markets.

Semiconductor Components Industries, LLC (onsemi) employs a combination of organic and inorganic growth strategies to enhance its market position in the global silicon carbide (SiC) market. On the organic side, in March 2025, the company introduced the EliteSiC SPM31 intelligent power modules, which integrate 1,200 V SiC MOSFETs into a compact three-phase inverter platform. These modules deliver higher efficiency and greater power density, making them suitable for industrial motor control and energy-saving applications. On the inorganic side, in January 2025, onsemi acquired Qorvo’s United SiC division, gaining access to advanced SiC JFET technologies. This acquisition enhances the company’s portfolio for high-performance applications, such as EV drivetrains, industrial power systems, and data centers. By combining product innovation with strategic acquisitions, onsemi expands its SiC capabilities, broadens its reach across automotive and industrial markets, and provides integrated solutions for fast-growing power electronics segments.

Infineon Technologies AG employs a combination of organic and inorganic growth strategies to enhance its position in the global silicon carbide (SiC) market. On the organic side, in July 2025, the company launched 1,200 V CoolSiC Generation-2 MOSFETs in a top-side-cooled Q-DPAK package, offering higher power density and improved thermal performance for industrial applications such as EV chargers, inverters, and UPS systems. On the inorganic side, in November 2024, Infineon entered into a collaboration with Stellantis N.V., which includes long-term supply commitments and capacity reservations to support Stellantis’ electrification roadmap. Under this partnership, Infineon will supply its CoolSiC devices, AURIX microcontrollers, and PROFET power switches for future vehicle platforms. By combining product innovation with strategic collaborations, Infineon enhances its SiC technology portfolio, expands adoption across automotive and industrial markets, and delivers integrated, high-performance solutions for the growing power electronics sector.

Market Ranking

The market ranking for key companies such as STMicroelectronics (Switzerland), Semiconductor Components Industries, LLC (US), Infineon Technologies AG (Germany), Wolfspeed, Inc. (US), and ROHM Co., Ltd. (Japan) is based on several key determinants, which include market share, product portfolio, technological innovations, and global presence.

STMicroelectronics (Switzerland) strengthens its position in the global SiC market through continuous technological innovation, strategic partnerships, and expanding its footprint across electric mobility, industrial, and energy applications. Semiconductor Components Industries, LLC (US) enhances its SiC capabilities by focusing on scalable solutions and high-efficiency power electronics for automotive, industrial, and energy sectors, driving adoption across multiple high-growth markets. Infineon Technologies AG (Germany) focuses on enhancing device performance, reliability, and market reach by collaborating with key automotive and industrial partners to support the transition to electrification and efficient power systems. Wolfspeed, Inc. (US) advances SiC technology through large-scale manufacturing, high-voltage solutions, and R&D initiatives, while ROHM Co., Ltd. (Japan) focuses on research, development, and strategic collaborations to broaden global SiC applications. Together, these leaders propel the SiC market through innovation, collaboration, and high-performance solutions across multiple sectors.

Related Reports:

Silicon Carbide (SiC) Market by SiC Discrete Device (SiC Diode and SiC MOSFET), SiC Module, Voltage Range (Up to 1,200 V, Low (1,200 V to 1,700 V), Medium (1,700 V to 3,300 V), High (More than 3,300 V)), Automotive SiC Device - Global Forecast to 2030

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