The SiC-on-insulator (SiCOI) film market size is projected to reach USD 1,134 million by 2029 from USD 37 million in 2024, at a CAGR of 98.1% from 2024 to 2029
The SiC-on-Insulator (SiCOI) film market employs two primary technology routes: Smart Cut Technology and Grinding/Polishing/Bonding Technology. These approaches are instrumental in fabricating SiCOI films with enhanced properties for diverse semiconductor applications.
Smart Cut Technology
Smart Cut Technology involves a sophisticated process where a donor wafer, typically consisting of a SiC layer, is bonded to a handle wafer with an oxide layer. The process includes:
Implantation: Hydrogen ions are implanted into the SiC donor wafer to create a buried layer of hydrogen bubbles.
Bonding: The implanted donor wafer is bonded to the handle wafer with an oxide layer, creating a temporary bond.
Splitting: The bonded wafer undergoes thermal annealing, which causes the hydrogen bubbles to expand, splitting the SiC layer at the hydrogen-rich layer.
Thin Film Formation: After splitting, a thin SiC layer remains on the handle wafer, forming the SiC-on-Insulator structure.
Smart Cut Technology offers precise control over the thickness and quality of the SiC layer, making it suitable for high-performance semiconductor devices requiring stringent specifications in terms of thickness uniformity and crystal quality.
Grinding/Polishing/Bonding Technology
Grinding/Polishing/Bonding Technology involves the following steps:
Grinding and Polishing: A bulk SiC wafer is ground and polished to achieve a smooth surface finish.
Oxidation: The polished SiC wafer undergoes oxidation to form a silicon dioxide (SiO2) layer on the surface.
Bonding: The oxidized SiC wafer is bonded to a handle wafer, typically silicon (Si), through a bonding process that may involve direct bonding or using an intermediate layer.
Thin Film Separation: The bonded wafer undergoes a separation process, which can include mechanical cleaving or laser-induced separation, to transfer a thin SiC film onto the handle wafer, forming the SiC-on-Insulator structure.
This technology route is advantageous for its simplicity and scalability in manufacturing SiC-on-Insulator films over larger substrate areas.
SiC-on-Insulator (SiCOI) film market Share: Applications and Industry Impact
SiC-on-Insulator films fabricated through these technology routes find applications in various industries, including power electronics, RF and microwave devices, and semiconductor manufacturing. Their superior thermal conductivity, high breakdown voltage, and reduced power consumption make them ideal for high-performance electronic devices, electric vehicles (EVs), renewable energy systems, and telecommunications infrastructure.
Future Developments of SiC-on-Insulator (SiCOI) film market Share:
As demand grows for advanced semiconductor materials capable of operating under extreme conditions with enhanced performance and efficiency, ongoing research and development efforts are focused on refining these technology routes. Innovations aim to further improve the manufacturing process, reduce costs, and expand the application areas of SiC-on-Insulator films in emerging technologies such as quantum computing, sensor technologies, and aerospace applications.
In conclusion, the SiC-on-Insulator (SiCOI) film market continues to evolve with advancements in Smart Cut Technology and Grinding/Polishing/Bonding Technology, driving innovation in semiconductor manufacturing and enabling new possibilities in high-performance electronic devices across industries.
