Here are relevant reports on : gan-power-device-market
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GaN Power Device Market by Device Type (Power, RF Power), Voltage Range, Application (Power Drives, Supply & Inverter, and RF), Vertical (Telecommunications, Consumer, Automotive, Military, Defense, Aerospace), and Geography - Global Forecast to 2023
The GaN power device market was valued at USD 327.3 Million in 2016 and is expected to reach USD 1,890.2 Million by 2023, at a CAGR of 29.1% during the forecast period. The base year considered for the study is 2016 and the forecast period is between 2017 and 2023. The objective of the report is to provide a detailed analysis of the market on the basis of device type, voltage range, application, vertical, and geography. The report also provides information regarding the major factors (drivers, restraints, opportunities, and challenges) influencing the growth of the GaN power device market, along with the detailed value chain. The report also profiles the most promising players in the GaN power device market. The competitive landscape of the market presents an interesting picture of the strategies adopted by a large number of players. The key players in this industry are Cree (US), Qorvo (US), MACOM (US), Microsemi Corporation (US), Analog Devices US), Efficient Power Conversion (US), Integra Technologies (US), Transphorm (US), Navitas Semiconductor (US), Texas Instruments (US), Sumitomo Electric (Japan), Northrop Grumman Corporation (US), Qromis (US), Polyfet (US), TOSHIBA (Japan), Sumitomo Electric (Japan), Mitsubishi Electric (Japan), Panasonic (Japan), GaN Systems (Canada), VisIC Technologies (Israel), GaNPower (Canada), Infineon (Germany), Exagan (France), Ampleon (Netherlands), and EpiGaN (Belgium).
- Published: December 2017
- Price: $ 4950
- TOC Available:
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RF Semiconductor Market by Device (Filter, Power Amplifier, Switch, Low Noise Amplifier), Frequency Band, Material (GaAs, GaN, Si) Application (Consumer Devices, Automotive, Telecommunication, Aerospace & Defense), and Region - Global Forecast to 2025
The global RF semiconductor market is expected to reach USD 26.2 billion by 2025, at a CAGR of 8.5% during the forecasting period. Major players in the RF semiconductor industry include Qorvo (US), Skyworks (US), Qualcomm (US), Analog Devices (US), NXP Semiconductors (Netherlands), Cree (US), MACOM (US), Microchip Technology (US), Murata Manufacturing (Japan), and Texas Instruments (US).
- Published: March 2020
- Price: $ 4950
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Compound Semiconductor Market Size by Type (GaN, GaAs, SiC, InP), Product (LED, Optoelectronics, RF Devices, Power Electronics), Application (Telecommunication, General Lighting, Automotive, Consumer Devices, Power Supply) & Region - Global Forecast to 2027
The global compound semiconductor market is expected to grow from USD 40.5 billion in 2022 to USD 55.8 billion by 2027, at a compound annual growth rate (CAGR) of 6.6% during the forecast period.The Key Players Nichia Corporation (Japan), Samsung Electronics Co., Ltd. (South Korea), ams OSRAM AG (Austria), Qorvo, Inc. (US), Skyworks Solutions, Inc. (US), Wolfspeed, Inc. (US), GaN Systems (Japan), Canon Inc. (Canada), Infineon Technologies AG (Germany), Mitsubishi Electric Corporation (Japan).
- Published: November 2022
- Price: $ 4950
- TOC Available:
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Solid-state Transformer Market by Semiconductor Device Type (SiC-based, GaN-based), Deployment Type (New Installation, Retrofit/Replacement), and End User (Electric Utilities, Renewable Energy Developers), and Application - Global Forecast to 2035
The solid-state transformer market is projected to reach USD 1.52 billion by 2035 from USD 0.28 billion in 2030, at a CAGR of 40.1%. The report profiles key players such as Hitachi Energy Ltd. (Switzerland), Ampereand PTE LTD (Singapore), Delta Electronics (Taiwan), Eaton (Ireland), RCT Systems (Switzerland), DG MATRIX (US), ABB (Switzerland), SolarEdge (Israel), WattEV (US), and GridBridge (US).
- Published: March 2026
- Price: $ 4950
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GaN Substrate Market - Global Forecast To 2029
The GaN substrate market focuses on producing and commercializing GaN substrates used across several semiconductor applications. These substrates are critical due to their ability to support high-performance devices that offer superior thermal stability, energy efficiency, and higher power density than traditional silicon.
- Published: May 2026
- Price: $ 4950
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GaN Laser Market - Global Forecast To 2030
A few factors such as high manufacturing costs, thermal management concerns, the presence of alternatives, and environmental concerns may adversely impact the growth of the GaN laser market.
- Published: May 2026
- Price: $ 4950
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Space Power Electronics Market by Device Type (Power Discrete, Power Module, Power IC), Application (Satellites, Spacecraft & Launch Vehicles, Space Stations, Rovers), Platform, Voltage, Current, Material and Region - Global Forecast to 2026
The Space power electronics market is projected to reach USD 435 million by 2026, at a CAGR of 16.2% during the forecast period. The space power electronics market is dominated by a few globally established players such as Infineon Technologies (Germany), Texas Instrument Incorporated US), STMicroelectronics (Switzerland), Onsemi (US), Renesas Electronics Corporation (Japan), among others.
- Published: April 2022
- Price: $ 4950
- TOC Available:
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Lithium-Ion Battery Materials Market by Battery Chemistry (LFP, LCO, NMC, NCA, LMO), Material (Cathode, Anode, Electrolyte), Application (Portable Device, Electric Vehicle, Industrial, Power Tool, Medical Device) & Region - Global Forecast to 2030
The global lithium-ion battery materials market is projected to grow from USD 48.29 billion in 2025 to USD 95.34 billion by 2030, at a CAGR of 14.6% during the forecast period. The Key Players Umicore (Belgium), Sumitomo Metal Mining Co., Ltd. (Japan), BASF (Germany), POSCO Future M (South Korea), Tanaka Chemical Corporation (Japan), Toda Kogyo Corp. (Japan), Resonac Holdings Corporation (Japan), LANDF Corp (China), JFE Chemical Corporation (China), 3M (US), SGL Carbon (Germany), NEI Corporation (US), BTR New Materials Group Co., Ltd. (China), UBE Corporation (Japan), Kuraray Co., Ltd. (Japan), Shenzhen Dynanonic Co., Ltd. (China), Huayou Cobalt Co., Ltd. (China), American Elements (US), Morita Chemical Industries Co., Ltd. (Japan), and others.
- Published: February 2026
- Price: $ 4950
- TOC Available:
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Power Over Ethernet Solutions Market by Type (PSE Controllers & ICs, PD Controllers & ICs), Device Type (Power Sourcing Equipment, Powered Devices), Application (Connectivity, LED Lighting Control), Vertical, and Geography - Global Forecast to 2022
The power over Ethernet solutions market was valued at USD 451.1 Million in 2015 and is expected to reach USD 1,048.3 Million by 2022, at a CAGR of 12.56% during the forecast period. The growth of this market is being propelled by the growing demand for PoE-based products, especially in the commercial vertical; continuous rise in the adoption of PoE-compatible VoIP phones and wireless access points; and increasing use of PoE power sourcing equipment for powering such devices.
- Published: October 2016
- Price: $ 4950
- TOC Available:
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Automotive Power Electronics Market by Device Type (Power IC, Module & Discrete), Application, Component (Sensor & Microcontroller), Material, Vehicle Type (Passenger Vehicle, LCV & HCV), Electric Vehicle Type, and Region - Global Forecast to 2025
The global automotive power electronics market size is expected to be worth USD 4.7 billion, growing at a CAGR of 4.7% by 2025. The automotive power electronics market is dominated by global players such as Robert Bosch (Germany), Continental AG (Germany), Infineon (Germany), STMicroelectronics (Switzerland), ON Semiconductor (US), Danfoss (Denmark), etc. These companies have adopted strategies of new product development, expansions, collaborations, partnerships, and mergers & acquisitions to gain traction in the market. New product development was most adopted strategy among others.
- Published: June 2020
- Price: $ 4950
- TOC Available:
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