Here are relevant reports on : gan-power-semiconductor-devices-market
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Compound Semiconductor Market Size by Type (GaN, GaAs, SiC, InP), Product (LED, Optoelectronics, RF Devices, Power Electronics), Application (Telecommunication, General Lighting, Automotive, Consumer Devices, Power Supply) & Region - Global Forecast to 2027
The global compound semiconductor market is expected to grow from USD 40.5 billion in 2022 to USD 55.8 billion by 2027, at a compound annual growth rate (CAGR) of 6.6% during the forecast period.The Key Players Nichia Corporation (Japan), Samsung Electronics Co., Ltd. (South Korea), ams OSRAM AG (Austria), Qorvo, Inc. (US), Skyworks Solutions, Inc. (US), Wolfspeed, Inc. (US), GaN Systems (Japan), Canon Inc. (Canada), Infineon Technologies AG (Germany), Mitsubishi Electric Corporation (Japan).
- Published: November 2022
- Price: $ 4950
- TOC Available:
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RF Semiconductor Market by Device (Filter, Power Amplifier, Switch, Low Noise Amplifier), Frequency Band, Material (GaAs, GaN, Si) Application (Consumer Devices, Automotive, Telecommunication, Aerospace & Defense), and Region - Global Forecast to 2036
The RF Semiconductor Market was valued at approximately USD 28 billion in 2025 and is projected to reach USD 78 billion by 2036, growing at a CAGR of 10% during the forecast period (2025–2036). The market is experiencing strong growth driven by the rapid expansion of wireless communication technologies and the increasing demand for high-frequency, high-performance electronic components. This growth is fueled by the proliferation of 5G networks, rising adoption of Internet of Things (IoT) devices, and increasing integration of artificial intelligence (AI) in communication systems. RF semiconductors play a critical role in enabling high-speed data transmission, low-latency communication, and efficient power management in modern devices. As industries accelerate digital transformation, the demand for RF components in smartphones, automotive systems, smart infrastructure, and industrial automation is significantly increasing, positioning the RF Semiconductor Market as a key enabler of next-generation connectivity.
- Published: June 2026
- Price: $ 4950
- TOC Available:
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GaN Power Device Market by Device Type (Power, RF Power), Voltage Range, Application (Power Drives, Supply & Inverter, and RF), Vertical (Telecommunications, Consumer, Automotive, Military, Defense, Aerospace), and Geography - Global Forecast to 2036
The global GaN Power Device Market was valued at approximately USD 2.5–3.5 billion in 2024 and is projected to reach USD 18–24 billion by 2036, expanding at a CAGR of 18%–22% during the forecast period. Gallium Nitride (GaN) power devices are rapidly gaining traction as a superior alternative to traditional silicon-based semiconductors due to their high efficiency, fast switching speeds, and ability to operate at higher voltages and temperatures. These advantages make GaN devices highly suitable for applications in electric vehicles (EVs), renewable energy systems, consumer electronics, and industrial automation.
- Published: June 2026
- Price: $ 4950
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Solid-state Transformer Market by Semiconductor Device Type (SiC-based, GaN-based), Deployment Type (New Installation, Retrofit/Replacement), and End User (Electric Utilities, Renewable Energy Developers), and Application - Global Forecast to 2035
The solid-state transformer market is projected to reach USD 1.52 billion by 2035 from USD 0.28 billion in 2030, at a CAGR of 40.1%. The report profiles key players such as Hitachi Energy Ltd. (Switzerland), Ampereand PTE LTD (Singapore), Delta Electronics (Taiwan), Eaton (Ireland), RCT Systems (Switzerland), DG MATRIX (US), ABB (Switzerland), SolarEdge (Israel), WattEV (US), and GridBridge (US).
- Published: March 2026
- Price: $ 4950
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Next Gen Transistors Market by Type (Hetero Junction Bipolar Transistor, High Electron Mobility Transistor, Metal-Oxide Semiconductor Field Effect Transistor), Material (Gan, Inas, Inp), & Geography - Global Forecast To 2020
Transistors play a central role in many electronic circuits, where they usually function as either a switch or an amplifier. This report focuses on the field of new age transistors whose channels are made from semiconductor nanomaterial. In this report the future developments in the nanowire field-effect transistor research area are also discussed.
The next generation transistor market is expected to witness a double digit growth rate in the coming years. The report deals with all the driving factors, restraints, and opportunities with respect to the next generation transistor market, which are helpful in identifying trends and key success factors for the industry. The report also includes qualitative analysis of the market by incorporating complete demand and capacity analysis, and Porter’s analysis of next generation transistor market.- Published: June 2026
- Price: $ 4950
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China Semiconductor Market for Automotive by Component (Microcontroller, Power Semiconductor, Sensor & MEMS Device, Memory Chip, Analog & Mixed Signal IC), Global & China Semiconductor Export, Alternate Destination - Trends and Strategic Recommendation
China’s exports of automotive semiconductors reached USD 419.15 billion in 2024, from USD 280.81 billion in 2020, with a CAGR of 8.9%. The major players in the China semiconductor market for automotive include SMIC (SEMICONDUCTOR MANUFACTURING INTERNATIONAL CORPORATION), GigaDevice Semiconductor Inc., Novosense Microelectronics, Silan Microelectronics, and HiSilicon.
- Published: June 2025
- Price: $ 4950
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GaN Semiconductor Device Market Size, Share, Trends, Statistics and Industry Growth Analysis Report by Type (Opto-semiconductor, RF Semiconductor, Power Semiconductor), Device (Discrete, Integrated, HEMT, MMIC), Application (Lighting and Lasers, Power Drives), Voltage Range, Vertical and Region- Global Growth Driver and Industry Forecast to 2028
The GaN Semiconductor Device Market is expected to grow from USD 21.1 billion in 2023 to USD 28.3 billion by 2028, at a compound annual growth rate (CAGR) of 6.1% during the forecast period.The key players Wolfspeed, Inc. (US), Qorvo, Inc. (US), MACOM Technology Solutions Holdings, Inc. (US), Infineon Technologies AG (Germany), Sumitomo Electric Industries, Ltd. (Japan), Mitsubishi Electric Group (Japan), NexGen Power Systems. (US), GaN Systems (Canada), Efficient Power Conversion Corporation (US), Odyssey Semiconductor Technologies, Inc. (US), ROHM Co., Ltd. (Japan), STMicroelectronics N.V. (Switzerland), and NXP Semiconductors N.V. (Netherlands).
- Published: August 2023
- Price: $ 4950
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GaN Substrate Market - Global Forecast To 2029
The GaN substrate market focuses on producing and commercializing GaN substrates used across several semiconductor applications. These substrates are critical due to their ability to support high-performance devices that offer superior thermal stability, energy efficiency, and higher power density than traditional silicon.
- Published: June 2026
- Price: $ 4950
- TOC Available:
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GaN Laser Market - Global Forecast To 2030
A few factors such as high manufacturing costs, thermal management concerns, the presence of alternatives, and environmental concerns may adversely impact the growth of the GaN laser market.
- Published: June 2026
- Price: $ 4950
- TOC Available:
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Immersive VR Market Size, Share and Trends by Head-Mounted Displays (HMDs), Gesture Tracking Devices, Display Walls & Projectors, Sensors, Semiconductor Components, Position & Room Trackers, Displays and Cameras - Global Forecast to 2029
The global immersive VR market size is expected to grow from USD 10.1 billion in 2024 to USD 34.9 billion by 2029, at a compound annual growth rate (CAGR) of 28.0% during the forecast period.The key players Meta (US), Sony Group Corporation (Japan), Samsung Electronics Co., Ltd. (South Korea), Microsoft (US), and Apple, Inc. (US).
- Published: September 2024
- Price: $ 4950
- TOC Available:
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