Here are relevant reports on : silicon-carbide-sic-power-device-market
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Silicon Carbide (SiC) Market by SiC Discrete Device (SiC Diode and SiC MOSFET), SiC Module, Voltage Range (Up to 1,200 V, Low (1,200 V to 1,700 V), Medium (1,700 V to 3,300 V), High (More than 3,300 V)), Automotive SiC Device - Global Forecast to 2030
The silicon carbide (SiC) market is expected to grow from USD 3.83 billion in 2025 to USD 12.03 billion by 2030, at a compound annual growth rate (CAGR) of 25.7% during the forecast period. The Key Players STMicroelectronics (Switzerland), Semiconductor Components Industries, LLC (US), Infineon Technologies AG (Germany), Wolfspeed, Inc. (US), and ROHM Co., Ltd. (Japan), Fuji Electric Co., Ltd. (Japan), Toshiba Electronic Devices & Storage Corporation (Japan), Microchip Technology Inc. (US), Mitsubishi Electric Corporation (Japan), and Robert Bosch GmbH (Germany).
- Published: October 2025
- Price: $ 4950
- TOC Available:
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North America Silicon Carbide (SiC) Market by SiC Discrete Devices, SiC Diodes, SiC MOSFETs, SiC Modules, Automotive, Energy & Power, Industrial, Transportation, Telecommunications, Up to 1200 V, 1200-1700 V, 1700-3300 V, and >3300 V - Forecast to 2030
The North America Silicon Carbide (SiC) market is projected to reach USD 1.47 billion by 2030 from USD 0.53 billion in 2025, at a compound annual growth rate (CAGR) of 22.8% during the forecast period. Key companies operating in the North America Silicon Carbide (SiC) market include STMicroelectronics (Switzerland), Semiconductor Components Industries, LLC (US), Infineon Technologies AG (Germany), WOLFSPEED, INC. (US), and ROHM Co., Ltd. (Japan).
- Published: October 2026
- Price: $ 4950
- TOC Available:
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Diesel Particulate Filter Market for On-Highway Vehicle by Substrate (Cordierite, Silicon Carbide), Regeneration Catalyst, Vehicle Type, Aftermarket, Off-highway Equipment Regeneration Process, Equipment Type, and Region - Global Forecast to 2025
The OE diesel particulate filter market is projected to grow at a CAGR of 11.29% during the forecast period. From an estimated market size of USD 10.55 billion in 2018, it is projected to reach a market size of USD 24.81 billion by 2025. The DPF aftermarket is projected to grow at a CAGR of 3.89% during the forecast period, from an estimated market size of USD 15.18 billion in 2018 to USD 20.59 billion by 2025. This growth can be attributed to the increasing stringency of emission regulations. The diesel particulate filter market consists of manufacturers such as Faurecia (France), Tenneco (US), Eberspaecher (Germany), BASF (Germany), Johnson Matthey (UK), Continental (Germany), Bosal (Belgium), Denso (Japan), Friedrich Boysen (Germany), and NGK Insulators (Japan).
- Published: July 2018
- Price: $ 4950
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Ceramic Foams Market by Type (Silicon Carbide, Aluminum Oxide, Zirconium Oxide), Application (Molten Metal Filtration, Thermal & Acoustic Insulation, Automotive exhaust Filters), End-use Industry (Foundry, Automotive), and Region - Global Forecast to 2023
The global ceramic foams market is estimated to be USD 343.2 Million in 2018 and is projected to reach USD 441.7 Million by 2023, at a CAGR of 5.2% between 2018 and 2023. The market is witnessing growth due to the increasing use of ceramic foams as filters in the metal casting industry and stringent regulations regarding pollution control. The growth is further driven by the demand for thermally insulated and soundproof residential and non-residential infrastructure. Ceramic foams manufacturers such as Ultramet (US), Vesuvius Plc (UK), SELEE Corporation (US), ERG Aerospace Corp. (US), Saint-Gobain High-Performance Refractories (US), Pyrotek (US), Induceramics (US), LANIK s.r.o (Czech Republic), Drache GmbH (Germany), and Baoding Ningxin New Material Co., Ltd. (China) have been covered in the report.
- Published: May 2018
- Price: $ 4950
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Data Center Power Semiconductor Market Size, Share & Growth by Type (MOSFET, IGBT, Diodes), Technology (Silicon (Si), Silicon Carbide (SiC)), Application (Server Power Supplies, Cooling Systems), and Data Center Size (Large Data Centers, Hyperscale Data Centers) - Global Forecast to 2032
The global data center power semiconductor market is valued at USD 2.03 billion in 2025 and is projected to reach USD 4.29 billion by 2032, growing at a CAGR of 11.0% from 2026 to 2032. This growth is fueled by explosive demand for AI-powered computing, hyperscale data center expansion, and the industry's urgent shift toward energy-efficient wide-bandgap semiconductors like silicon carbide (SiC) and gallium nitride (GaN) to meet sustainability targets and handle rising power densities.
- Published: November 2026
- Price: $ 4950
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Compound Semiconductor Market Size by Type (GaN, GaAs, SiC, InP), Product (LED, Optoelectronics, RF Devices, Power Electronics), Application (Telecommunication, General Lighting, Automotive, Consumer Devices, Power Supply) & Region - Global Forecast to 2027
The global compound semiconductor market is expected to grow from USD 40.5 billion in 2022 to USD 55.8 billion by 2027, at a compound annual growth rate (CAGR) of 6.6% during the forecast period.The Key Players Nichia Corporation (Japan), Samsung Electronics Co., Ltd. (South Korea), ams OSRAM AG (Austria), Qorvo, Inc. (US), Skyworks Solutions, Inc. (US), Wolfspeed, Inc. (US), GaN Systems (Japan), Canon Inc. (Canada), Infineon Technologies AG (Germany), Mitsubishi Electric Corporation (Japan).
- Published: November 2022
- Price: $ 4950
- TOC Available:
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Solid-state Transformer Market by Semiconductor Device Type (SiC-based, GaN-based), Deployment Type (New Installation, Retrofit/Replacement), and End User (Electric Utilities, Renewable Energy Developers), and Application - Global Forecast to 2035
The solid-state transformer market is projected to reach USD 1.52 billion by 2035 from USD 0.28 billion in 2030, at a CAGR of 40.1%. The report profiles key players such as Hitachi Energy Ltd. (Switzerland), Ampereand PTE LTD (Singapore), Delta Electronics (Taiwan), Eaton (Ireland), RCT Systems (Switzerland), DG MATRIX (US), ABB (Switzerland), SolarEdge (Israel), WattEV (US), and GridBridge (US).
- Published: March 2026
- Price: $ 4950
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Wide Bandgap Semiconductors Market By Material ( Silicon Carbide (SiC),Gallium Nitride (GaN),Aluminum Nitride (AlN)), Device Type(Power Devices, Radio Frequency (RF) Devices), Vertical(Automotive, Consumer Electronics, Aerospace, IT & Telecommunications) Region (North America, Europe, Asia Pacific, ROW ) – Global Forecast To 2030
The major players in the global Wide Bandgap Semiconductors Market
- Published: November 2026
- Price: $ 4950
- TOC Available:
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Aircraft Power Electronics Market by Components (Generators, Rectifiers, Converters, Others), Voltage (Less than 200 V, 200 V to 500 V, More than 500 V), Technology (More Electric, Hybrid Electric, Fully Electric), Application (Power Generation Management, Flight Control & Operation, Cabin System, Configuration Management, Power Distribution, Air Pressurization and Condition), Material (Silicon Carbide (SiC), Gallium Nitride (GaN) and Others), Platforms (Commercial Aviation, Military Aviation, Business & General Aviation), and Region - Global Forecast to 2025
The study involved four major activities in estimating the current market size for the aircraft power electronics market. Exhaustive secondary research was undertaken to collect information on the market, the peer markets, and the parent market. The next step was to validate these findings, assumptions, and sizing with industry experts across the value chain through primary research. Both top-down and bottom-up approaches were employed to estimate the complete market size. Thereafter, market breakdown and data triangulation procedures were used to estimate the market size of segments and subsegments.
- Published: November 2026
- Price: $ 4950
- TOC Available:
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GaN Power Device Market by Device Type (Power, RF Power), Voltage Range, Application (Power Drives, Supply & Inverter, and RF), Vertical (Telecommunications, Consumer, Automotive, Military, Defense, Aerospace), and Geography - Global Forecast to 2036
The global GaN Power Device Market was valued at approximately USD 2.5–3.5 billion in 2024 and is projected to reach USD 18–24 billion by 2036, expanding at a CAGR of 18%–22% during the forecast period. Gallium Nitride (GaN) power devices are rapidly gaining traction as a superior alternative to traditional silicon-based semiconductors due to their high efficiency, fast switching speeds, and ability to operate at higher voltages and temperatures. These advantages make GaN devices highly suitable for applications in electric vehicles (EVs), renewable energy systems, consumer electronics, and industrial automation.
- Published: November 2026
- Price: $ 4950
- TOC Available:
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