Japan Gallium Nitride Semiconductor Device Market (2023-2028)

RESEARCH METHODOLOGY

The research study involved 4 major activities in estimating the size of the GaN semiconductor device market. Exhaustive secondary research has been done to collect important information about the market and peer markets. The validation of these findings, assumptions, and sizing with the help of primary research with industry experts across the value chain has been the next step. Both top-down and bottom-up approaches have been used to estimate the market size. Post which the market breakdown and data triangulation have been adopted to estimate the market sizes of segments and sub-segments.

Secondary Research

In the secondary research process, various secondary sources have been referred to for identifying and collecting information required for this study. The secondary sources include annual reports, press releases, and investor presentations of companies, white papers, and articles from recognized authors. Secondary research has been mainly done to obtain key information about the market’s value chain, the pool of key market players, market segmentation according to industry trends, regional outlook, and developments from both market and technology perspectives.

Primary Research

In primary research, various primary sources from both supply and demand sides have been interviewed to obtain the qualitative and quantitative insights required for this report. Primary sources from the supply side include experts such as CEOs, vice presidents, marketing directors, manufacturers, technology and innovation directors, end users, and related executives from multiple key companies and organizations operating in the GaN semiconductor device ecosystem.

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Market Size Estimation

In the market engineering process, both top-down and bottom-up approaches have been used, along with data triangulation methods, to estimate and validate the size of the GaN semiconductor device market and other dependent submarkets. The research methodology used to estimate the market sizes includes the following:

• Identifying stakeholders in the GaN semiconductor device market that influence the entire market, along with participants across the value chain.
• Analyzing major manufacturers of GaN semiconductor devices and studying their product portfolios
• Analyzing trends related to the adoption of GaN semiconductor devices
• Tracking the recent and upcoming developments in the market that include investments, R&D activities, product launches, collaborations, acquisitions, agreements, and partnerships, as well as forecasting the market size based on these developments and other critical parameters
• Carrying out multiple discussions with key opinion leaders to identify the adoption trends of GaN semiconductor devices
• Segmenting the overall market into various other market segments
• Validating the estimates at every level through discussions with key opinion leaders, such as chief executives (CXOs), directors, and operation managers, and finally with the domain experts at MarketsandMarkets

Market Size Estimation Methodology-Bottom-up Approach

Data Triangulation

After arriving at the overall market size by the market size estimation process explained in the earlier section, the overall GaN semiconductor device market has been divided into several segments and subsegments. The data triangulation and market breakdown procedures have been used to complete the overall market engineering process and arrive at the exact statistics for all segments, wherever applicable. The data has been triangulated by studying various factors and trends from both the demand and supply sides. Along with data triangulation and market breakdown, the market has been validated by top-down and bottom-up approaches.

Market Definition

Gallium nitride (GaN) semiconductor device is a robust and mechanically stable semiconductor device that offers a wide bandgap with exceptional properties such as high-power capability, enhanced thermal conductivity, and high-performance efficiency. It delivers higher breakdown strength, faster switching speed, superior thermal conductivity, and lower on-resistance, making the GaN-based power devices more efficient than traditional silicon-based power devices. GaN semiconductor devices are used in lighting, lasers, power drives, supplies, inverters, and radio frequency (RF) components. It can successfully replace silicon semiconductors in power drives, supplies, inverters, and RF applications, as it delivers versatile features and enhanced performance efficiency. As a result, GaN semiconductor device is expected to have a high market growth due to its potential to cater to various high-performance electronic applications.

Stakeholders

• Raw material suppliers
• Design tool and fabrication equipment vendors
• Wafer manufacturers
• Wafer equipment manufacturers
• Integrated devices manufacturers (IDMs)
• Pure-play foundry vendors
• Non-pure-play (IDM) foundry vendors
• Electronic design automation (EDA) vendors
• Fabrication players
• Semiconductor intellectual property vendors
• Original devices manufacturers (ODMs) (discrete and chip manufacturers)
• Original equipment manufacturers (OEMs) (electronic equipment manufacturers)
• Assembly, testing, and packaging vendors
• Distributors and Resellers
• End Users

The main objectives of this study are as follows:

• To define, analyze and forecast the gallium nitride (GaN) semiconductor device market based on type, device, application, vertical, voltage range, and region in terms of value.
• To define, analyze, and forecast the GaN semiconductor device market based on device in terms of volume
• To forecast the market size for various segments with respect to four main regions, namely, North America, Europe, Asia Pacific, and the Rest of the World (RoW)
• To provide detailed information regarding the major drivers, restraints, opportunities, and challenges influencing the growth of the GaN semiconductor device market
• To study and analyze the complete value chain of the GaN semiconductor device market
• To strategically analyze the micromarkets with respect to individual growth trends, prospects, and contributions to the total market
• To analyze the GaN semiconductor device ecosystem; trends/disruptions impacting customers’ businesses; technology analysis; pricing analysis; Porter’s five forces analysis; key stakeholders & buying criteria; case study analysis; trade analysis; patent analysis; key conferences & events, 2023–2024; and tariff and regulations related to the GaN semiconductor device market.
• To analyze opportunities in the market for various stakeholders by identifying the high growth segments
• To strategically profile the key players and comprehensively analyze their market position in terms of ranking and core competencies, along with detailing the competitive landscape for the market leaders
• To analyze competitive developments such as product launches, agreements, collaborations, partnerships, acquisitions, and expansions carried out by players in the GaN semiconductor device market

Available Customizations:

With the given market data, MarketsandMarkets offers customizations according to the specific requirements of companies. The following customization options are available for the report:

Country-wise Information:

• Analysis for additional countries (up to five)

Company Information:

• Detailed analysis and profiling of additional market players (up to five)